? 2002 ixys all rights reserved hiperfast tm igbt preliminary data sheet v ces = 1200 v i c25 = 70 a v ce(sat) = 4.0 v t fi(typ) = 115 ns ixgk 35n120c ixgx 35n120c ixgk 35n120cd1 ixgx 35n120cd1 g = gate, c = collector, e = emitter, tab = collector features international standard packages jedec to-264 and plus247 tm low switching losses, low v (sat) mos gate turn-on - drive simplicity applications ac motor speed control dc servo and robot drives dc choppers uninterruptible power supplies (ups) switched-mode and resonant-mode power supplies advantages high power density easy to mount with 1 screw, (isolated mounting screw hole) ds98961 (10/02) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 1 ma, v ge = 0 v 1200 v v ge(th) i c = 750 a, v ce = v ge 2.5 5 v i ces v ce = v ces t j = 25 c 250 a v ge = 0 v t j = 125 c5ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c90 , v ge = 15 v 4.0 v t j = 125 c 3.2 v symbol test conditions maximum ratings v ces t j = 25 c to 150 c 1200 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 1200 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c70a i c90 t c = 90 c35a i cm t c = 25 c, 1 ms 140 a ssoa v ge = 15 v, t vj = 125 c, r g = 5 ? i cm = 90 a (rbsoa) clamped inductive load @ 0.8 v ces p c t c = 25 c 350 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s m d mounting torque (m3) (ixgk) 1.13/10nm/lb.in. weight to-264 aa 10 g plus247 tm 6g to-264 aa (ixgk) (d1) g e c (tab) g c e c (tab) c spring clip or clamp assembly possible. plus 247 tm (ixgx)
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixgk 35n120c ixgx 35n120c ixgk 35n120cd1 ixgx 35n120cd1 to-264 aa outline (ixgk) remarks: switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g remarks: switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c90 ; v ce = 10 v, 30 40 s pulse test, t 300 s, duty cycle 2 % c ies 4620 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 260 pf c res 90 pf q g 170 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 28 nc q gc 57 nc t d(on) 50 ns t ri 27 ns t d(off) 150 220 ns t fi 115 190 ns e off 3.0 4.2 mj t d(on) 55 ns t ri 31 ns e on 2.6 mj t d(off) 220 ns t fi 260 ns e off 6.2 mj r thjc 0.35 k/w r thck 0.15 k/w inductive load, t j = 125 c i c = i c90 , v ge = 15 v v ce = 0.8 v ces , r g = r off = 5 ? inductive load, t j = 25 c i c = i c90 , v ge = 15 v v ce = 0.8 v ces , r g = r off = 5 ? plus247 tm outline (ixgx) dim. mil limeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector) millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim. reverse diode (fred) characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. v f i f = i c90 , v ge = 0 v, pulse test, 2.35 v t 300 s, duty cycle d 2 %, t j = 125 c i rm i f = i c90 , v ge = 0 v, -di f /dt = 480 a/ s3236a t rr v r = 540 v t j =100 c 225 ns i f = 1 a; -di/dt = 200 a/ s; v r = 30 v t j =25 c40 60ns r thjc 0.65 k/w
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